GaAs器件和MMIC的失效分析  

Failure Analysis of GaAs Devices and MMIC

作　　者：崔晓英[1] 黄云[1] 恩云飞[1] 

机构地区：[1]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术国防科技重点实验室,广州510610

出　　处：《失效分析与预防》2010年第3期187-192,共6页Failure Analysis and Prevention

基　　金：国防科技重点实验室基金项目(JS0926270)

摘　　要：从可靠性物理的角度,分析引起砷化镓(GaAs)器件和单片微波集成电路(MMIC)退化或失效的主要失效模式及其失效机理,明确了GaAsMMIC的可靠性问题主要表现为有源器件、无源器件和环境因素等引入了损伤退化,并针对几种常见的失效原因:过电烧毁、静电损伤、器件分层、设计和工艺缺陷等进行举例分析,为生产和使用过程中控制其主要的失效模式及失效机理提供参考和依据。Based on reliability physics,the basic failure modes and mechanisms of GaAs devices and MMIC have been analyzed.Degeneration and damage related to active parts and passive parts of GaAs devices and MMIC and environments are dominant reliability problems.Further more,examples are showed on several familiar failure causes,including electrical over stress burnout,electrostatic discharge damage,device delamination,design and process flaw,which provided references for controlling the main failure modes and failure mechanisms of GaAs devices and MMIC.

关 键 词：砷化镓器件 单片微波集成电路 失效模式和机理 失效分析 

分 类 号：TN386[电子电信—物理电子学]