一种1.5V 8.3×10^(-6)/°C数字控制型CMOS带隙基准电压源  

A 1.5 V 8.3×10^(-6)/°C Digital Controlled CMOS Bandgap Voltage Reference

作　　者：邹亮[1] 唐长文[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海201203

出　　处：《固体电子学研究与进展》2010年第3期431-435,共5页Research & Progress of SSE

基　　金：国家高技术研究发展计划资助项目(2007AA01Z282);国家自然科学基金资助项目(60876019)

摘　　要：提出了一种新颖的带有数字控制的带隙基准电压源,此带隙基准电压源通过控制PNP晶体管的导通来实现可调的输出参考电压和可调的温度系数。此电路通过数字信号控制获得了一组不同的温度曲线,从这组温度曲线中,可以得到精确的输出参考电压和非常好的温度特性曲线。数字控制型带隙基准电压源的输出电压误差可以控制在±4mV以内,最好的温度系数可以达到8.3×10-6/°C(温度从-40～80°C变化时),在电源电压从1.5～3.3V变化时输出参考电压仅变化1mV。所设计的带隙基准电压源,采用SMIC0.18μmCMOS工艺流片实现,面积为0.09mm2。A novel digital controlled bandgap voltage reference is proposed in this paper. The adjustable voltage reference and temperature coefficient is implemented by controlling the number of PNP transistors. From a group of temperature curves controlled by digital control bits, a precise output reference voltage and temperature coefficient optimized curve can be obtained. The measurement indicates that the error of voltage reference can be controlled under ±4 mV, the best temperature coefficient achieves 8.3×10^-6/℃ from -40℃ to 80℃, and the reference volt- age varies only 1 mV with supply voltage from 1.5 V to 3.3 V. The proposed bandgap circuit is fabricated in a SMIC 0. 18 μm CMOS process, and die area is 0. 09 mm^2.

关 键 词：带隙基准 数字控制 可校正电压参考 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]