基于光腔中的两囚禁离子的一步操作实现量子相位门  

One-step Scheme to Implement Quantum Logic Gates between Two Trapped Ions in an Optical Cavity

作　　者：康广青[1] 

机构地区：[1]山西大学理论物理研究所,山西太原030006

出　　处：《山西大学学报（自然科学版）》2010年第A01期27-29,共3页Journal of Shanxi University(Natural Science Edition)

基　　金：国家自然科学基金（10775091）

摘　　要：文章提出了用置于光腔中的两个囚禁离子来实现量子相位门的一步操作方案，本方案既不需要辅助能级，也不需要兰姆-狄克限制，只涉及两囚禁离子的内态，仅一步操作即可实现两比特的量子相位门，所需的门操作时间很短，并且腔场的初态制备在真空态上，这样腔损可被忽略掉．本方案在实验上是可行的，是一种简单有效的方案．A one-step scheme for realizing quantum logic gates with two trapped ions in the optical cavity beyond the Lamb Dicke limit is introduced without using the auxiliary atomic levels. The quantum logicgate operation involves internal states of two trapped ions,and the two-qubit phase gate will be able to achieve only in a single-step. During the logic gate operation-time, which is rather short, the cavity is assumed to be remained in the vacuum state,and thus the cavity decay can be ignored. The proposed scheme is experimental feasible, is more simple and effective.

关 键 词：囚禁离子 兰姆-狄克极限 量子相位门 

分 类 号：O413[理学—理论物理]