Mg掺杂Ba(Zr_(0.25)Ti_(0.75))O_3薄膜的介电调谐性能  

Dielectric and Tunable Properties of Mg Doped Ba(Zr_(0.25)Ti_(0.75))O_3 Thin Films

作　　者：孙小华[1] 周生刚[1] 李修能[1] 吴敏[1] 

机构地区：[1]三峡大学机械与材料学院,湖北宜昌443002

出　　处：《三峡大学学报（自然科学版）》2010年第4期91-94,共4页Journal of China Three Gorges University：Natural Sciences

基　　金：湖北省自然科学基金项目(2008CDB262);湖北省教育厅项目(Q20081304)

摘　　要：采用溶胶凝胶工艺,在Pt/Ti/SiO2/Si衬底制备了Mg掺杂Ba(Zr0.25Ti0.75)O3(BZT)薄膜.利用X射线衍射(XRD)和原子力显微镜(AFM)分析测定了物相微结构和薄膜表面形貌,研究了Mg掺杂含量对BZT微结构和介电调谐性能的影响.结果表明Mg掺杂BZT使薄膜表面粗糙度、晶粒尺寸、介电常量、介电损耗和调谐量都降低;5mol%Mg掺杂BZT薄膜有最大的优值因子为16.3,其介电常数、介电损耗和调谐量分别为289.5、0.016和26.8%.The Mg doped Ba（Zr0.25 Ti0.75）O3 （BZT） thin films were fabricated by sol-gel method on Pt/Ti/ SiO2/Si substrate. X-ray diffraction and atom force microscope were used to determine the microstructure and the surface morphology of the thin films. The influence of the Mg content on microstructure and dielectric tunable properties of Mg doped BZT thin films was investigated. The results show that the surface roughness, grain size, dielectric constant, dielectric loss and tunability of Mg doped BZT thin films all decrease with the increase of the Mg content. At room temperature and 1 MHz, 5%Mg doped BZT thin film has the highest FOM of 16.3; and its dielectric constant, loss and tunability are 289.5, 0. 016 and 26.8% respectively.

关 键 词：BZT薄膜 Mg掺杂 溶胶凝胶 介电调谐性能 

分 类 号：TB34[一般工业技术—材料科学与工程] TB43