基于自组装单分子层技术的单晶硅表面化学镀镍工艺优化  

Process Optimization for Electroless Nickel Plating of Single Crystal Silicon Based on Self-Assembly Monolayer

作　　者：胡睿[1] 熊晓玲[1] 王关全[1] 魏洪源[1] 张华明[1] 杨玉青[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900

出　　处：《材料保护》2010年第9期32-34,共3页Materials Protection

基　　金：中国工程物理研究院科学技术发展基金(2007A02001)资助

摘　　要：传统的化学镀镍前处理会对单晶硅造成严重影响,进而影响两者的结合。以单因素条件设计并结合4因素3水平正交试验,对单晶硅表面进行改性活化处理,优选出化学镀镍的处理条件为:羟基化处理15h,偶联处理48h,再在化学镀液中于90℃下施镀1h,在此条件下对单晶硅化学镀镍可以获得的沉积速度高达6.137mg/(cm2.h),且镀层与硅片结合牢固,颗粒品质优良。Orthogonal tests involving four factors and three levels were designed and carried out to optimize pre-treatment condi-tions for electroless Ni plating,which was based on surface modi-fication and activation of single crystal Si.Results show that after hydroxylation-treatment for 15 h,coupling for 48 h and reaction for 1 h at 90℃,resultant single crystal Si allows growth of elec-troless Ni coating at a deposition rate of as much as 6.137 mg/(cm2.h),and the Ni coating composed of refined Ni grains has good adhesion to Si wafer substrate.

关 键 词：化学镀镍 自组装单分子层技术 单晶硅 正交试验 

分 类 号：TQ153.12[化学工程—电化学工业]