SiO_x∶Er薄膜材料光致发光特性的研究  

Study on Photoluminescence Characteristics of SiO_x∶Er Thin Films

作　　者：沈海波[1] 郭亨群[1,2] 徐骏[3] 陈坤基[3] 王启明[2] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021 [2]中国科学院半导体研究所集成光电子国家重点联合实验室,北京100083 [3]南京大学物理学系,南京210093

出　　处：《半导体技术》2010年第9期877-880,938,共5页Semiconductor Technology

基　　金：国家重点基础研究发展“973”计划(2007CB613401);集成光电子国家重点联合实验室开放课题(20080301)

摘　　要：采用射频磁控反应溅射技术,以Er2O3和Si为靶材,制备了SiOx∶Er薄膜材料,在不同温度和不同时间下进行退火处理,室温下测量了样品的光致发光(PL)谱,观察到Er3+在1 530,1 542和1 555 nm处波长的发光,发现退火能明显增强Er3+的发光。研究了退火温度和时间对SiOx∶Er薄膜光致发光的影响,发现Er2O3与Si面积比为1∶1时,1 100℃下20 min退火为样品的最佳退火条件。采用XRD和材料光吸收测试对样品结构和光学性质进行了研究,得到样品中Si晶粒大小为1.6 nm,样品的光学带隙为1.56 eV。对3种不同Er2O3与Si面积比的SiOx∶Er薄膜材料进行研究,得到Er2O3与Si面积比为1∶3为样品的最佳配比,对薄膜材料发光现象进行了探讨。SiOx ：Er thin films were prepared by RF magnetron reactive sputtering technique using Er2O3 and Si targets. After annealing at different temperatures and time, the samples exhibit photoluminescence peaks at around 1 530, 1 542 and 1 555 nm. It is found that annealing can enhance the PL intensity remarkably. The variations of SiOx ： Er thin films photoluminescence with annealing temperatures and annealing time were also studied, and found that when Er203 ： Si of 1 ： 1, the temperature of 1 100 ~C, 20 min annealing were the best annealing conditions. XRD spectra and optical absorption measurements are performed to investigate the structure of films, therefore, the size of nc-Si is 1.6 nm, the optical band gap Eg of the sample is estimated to be 1.56 eV, indicating that the films are silicon-rich. Finally, three different Er203 and Si proportions were studied, the best ratio of the Er203 ： Si is 1 ： 3, and the luminescence phenomenon of films was discussed.

关 键 词：射频磁控反应溅射 SiOx∶Er薄膜 光致发光 

分 类 号：O472.3[理学—半导体物理]