原位法制备通孔AAO模板的原理和工艺  

Principle and Process of Fabrication for Holing-Through AAO Templates in Situ

作　　者：秦刚[1] 何凤英[1] 郭光华[1] 

机构地区：[1]中南大学物理科学与技术学院,长沙410083

出　　处：《半导体技术》2010年第9期889-893,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60571043);湖南省自然科学基金资助项目(07JJ3103)

摘　　要：AAO模板是制备纳米材料常用的模板,然而由于阻挡层的存在,制约了其在很多方面的应用。介绍了在不剥离基体的前提下,采用阶梯降压法和反向电压法在原位除去阻挡层,制备通孔的模板。利用场发射扫描电镜对其形貌进行了表征,分析了这两种方法在原位去除阻挡层的原理,讨论了其工艺条件对制备通孔模板的影响,并对其结果进行了比较。结果表明:阶梯降压法能有效减薄阻挡层厚度,通过后续磷酸浸泡能达到在原位除去阻挡层的目的,但是底部孔道出现分叉现象;而反向降压法能在原位有效除去阻挡层,且不破坏模板。AAO templates their applications are restricted are often used in fabrication of nanomaterials, but for the barrier layers, in many fields. It is investigated that the barrier layers were removed by the step-by-step voltage decrement and the reversed voltage in situ, and the holing-throughed templates were obtained. The morphologies were characterized by field emission scanning electron microscope, the principle of these two methods in removing the barrier layer in situ was analysed. In addition, the influences and resuhs of conditions on fabrication of holing-through AAO templates were discussed. The results show that the step-by-step voltage decrement could decrease barrier layer, with later disposal by phosphoric acid, the barrier layer is removed in situ, but it would bring on bifurcate in the bottom of porous channels ; the reversed voltage could remove barrier layer effectively in situ with no devastate templates .

关 键 词：通孔AAO模板 阶梯降压法 反向电压法 原位 

分 类 号：TN304[电子电信—物理电子学] TN305