适用于中国UWB标准0.18μm CMOS发射机前端研制  

Design of Transmitter Front-End for China UWB Standard in 0.18 μm CMOS

作　　者：张永琥[1] 张海英[1] 高振东[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2010年第9期923-927,共5页Semiconductor Technology

基　　金：国家科技重大专项(2009ZX3006-008);国际科技合作项目(2008DFA10490)

摘　　要：基于0.18μm CMOS工艺设计了一款适用于中国超宽带(UWB)标准的发射机前端。该发射机前端通过在片内集成有源巴仑,实现了信号先差分至单端转化、后信号放大的策略,不仅提高了系统集成度而且有利于降低系统功耗。同时,提出折叠PMOS跨导技术使混频器的线性度得以提升,利于增大发射链路中低频放大器的增益比重以减轻高频放大器的压力。最终,对前端电路应用并联峰化技术,满足了系统对带宽的要求。芯片采用COB(chip on board)方式测试,结果表明:射频输出端口在5～11.5 GHz内匹配良好,系统的IP-1dB约为-2 dBm。芯片面积为0.8 mm×1.1 mm,工作电压1.8 V时消耗电流20.4 mA。为中国超宽带(UWB)标准的进一步研究提供了参考。A transmitter front-end for China UWB standard was demonstrated in 0.18 μm CMOS technology. Architecture of the transmitter front-end was designed by integrating an active Balun to realize the tactic of converting differential signal to single-ended before amplifying beneficial to low power consumption and high system integrity. A folded PMOS transconductance topology was presented to improve the linearity, which allowed more gain in low-frequency amplify while alleviating the pressure of high-frequency amplify. And finally, the shunt-peaking technology was introduced to extend the bandwidth. The chip is measured by COB （chip on board）, and the results show that the output impedance matching is well between 5 to 11.5 GHz, is about - 2 dBm. The current is 20.4 mA under a supply voltage of 1.8 V, with a compact chip size of O. 8 mm × 1.1 mm, it provides that a reference for further research for China UWB standard.

关 键 词：0.18μm-CMOS 中国超宽带标准 折叠PMOS跨导级混频器 有源巴仑 

分 类 号：TN834[电子电信—信息与通信工程] TN74