三元1维含缺陷层光子晶体带隙结构  

Band gap of 3-element 1-D defective mode photonic crystal

作　　者：张玲[1] 梁良[1] 周超[1] 

机构地区：[1]西安建筑科技大学物理系,西安710055

出　　处：《强激光与粒子束》2010年第10期2465-2468,共4页High Power Laser and Particle Beams

基　　金：陕西省教育厅科技专项项目(08JK343)

摘　　要：利用传输矩阵法研究了含缺陷三元1维光子晶体的带隙结构,并通过数值模拟分析了光子晶体缺陷层厚度的变化对带隙结构产生的影响。结果表明:含缺陷对称分布的三元1维光子晶体,缺陷层厚度对禁带的带宽影响不大;在较宽的禁带中存在一个很窄的透射峰,该透射峰随着缺陷厚度的增加而红移。在一定的范围内,给出了该透射峰波长随缺陷厚度变化的非线性函数关系,在此基础上对禁带中该透射峰的半峰全宽做了计算,给出了半峰全宽随缺陷厚度变化的关系图。The band gap structure of 3-element 1-D photonics crystal with defective mode was studied by transfer matrix method,and the influence of the variation of the defect thickness on band gap structure was analyzed through numerical simulation.The simulation indicates that,for 3-element 1-D photonic crystal with symmetrically distributed defects,the defect thickness has little influence on the width of band gap;in the broader band gap,there is a sharp transmission peak,which will take red shift with increase of the defect thickness.Within a given range,the nonlinear relationship between wave length of the transmission peaks and defect thickness was presented,on which,FWHM of the transmission peak in band gap was calculated,furthermore,the relation graph between wave length FWHM and the defect thickness was plotted.

关 键 词：光子晶体 传输矩阵 缺陷厚度 非线性拟合 半高宽 

分 类 号：O734[理学—晶体学]