YBa_2Cu_3O_(7-δ)外延薄膜中二维钉扎效  

TWO-DIMENSIONAL PINNING IN EPITAXIAL YBa_2Cu_3O_(7-δ) THIN FILMS

作　　者：王智河[1] 张宏[1] 陈治友[2] 王胜[2] 曹效文[2] 李可斌 

机构地区：[1]中国科学院上海冶金研究所,上海200050 [2]中国科学院等离子体物理研究所强磁场实验室,合肥230031 [3]中国科学院团体物理所,合肥230031

出　　处：《功能材料与器件学报》1999年第2期103-109,共7页Journal of Functional Materials and Devices

基　　金：上海市博士后基金;国家超导研究与开发资助项目

摘　　要：在几个恒定磁场中，测量了不同磁场取向下ＹＢａ２Ｃｕ３Ｏ７外延薄膜的电阻转变曲线。实验结果表明，由不同约化电阻判据确定的特征温度Ｔ＊、有效钉扎势Ｕ以及临界电流密度Ｊｃ均随着磁场与膜面的夹角增大而变化，并表现出相同的变化规律。在夹角小于７５范围内，本征钉扎机制起支配作用；而在９０附近，沿ｃ轴方向的二维缺陷等对磁通线的钉扎作用十分明显。The resistive broadening and the critical current density,of an epitaxial YBa2Cu3O7- thin film atseveral fixed magnetic fields have been measured as a function of the angle between applied magneticfield and the film. The results show that the angular dependence of the characteristic temperatureT* determined by different reduced resistivity criteria, the effective pinning potential and the criticalcurrent density follow the prediction of the intrinsic pinning model for the angle changing from 0 to 75 , illustrating the strong planar pinning mechanism. The anomalous peaks of the characteristictemperature T*, the effective pinning potential and the critical current density were observed near 90 ,which indicate that 2D defects along c-axis are responsible for the effect of flux line pinning.

关 键 词：外延薄膜 磁通钉扎 临界电流密度 氧化物超导体 

分 类 号：TM262.014[一般工业技术—材料科学与工程]