SiC晶须改性紫外光敏树脂的研究  

Ultraviolet photosensitive resin modified lay SiC whisker

作　　者：朱丽梅[1] 郭卫卫[1] 王爱玲[1] 刘永姜[1] 

机构地区：[1]中北大学机械工程与自动化学院,山西太原030051

出　　处：《兵器材料科学与工程》2010年第5期85-87,共3页Ordnance Material Science and Engineering

摘　　要：采用紫外光固化快速成型工艺制备了SiC晶须/树脂基复合材料,并研究其微观结构和力学性能。微观结构观察表明:SiC晶须的引入使得材料的断裂发生从脆性断裂到韧性断裂的转变。实验结果表明:使用酸化的丙酮偶联剂溶液对晶须进行表面处理有利于复合材料性能的提高;SiC晶须的加入可明显提高材料的力学性能,但同时会使固化速度变慢。Silicon carbide whisker/resin matrix composite was prepared by UV Stereolithograghy（SL）,and the microstructure and mechanical properties were studied.The microstructure shows that dispersing the silicon carbide whisker in the photosensitive resin makes material fracture mode change from brittle fracture to ductile fracture.Experimental results show that using acidizing solution of acetone-coupling agent to treat silicon carbide whisker can obviously improve the performance of composite material.The mechanical property of composite material is improved a lot after being modified by silicon carbide whisker.But increasing the quantity of whisker in the photosensitive resin can make the curing rate decrease significantly.

关 键 词：SIC晶须 紫外光敏树脂 复合材料 力学性能 

分 类 号：TQ016[化学工程]