连续百瓦级高功率半导体阵列激光器热效应分析  

Thermal Analysis of High Power Diode Laser Arrays with Hundred-Watt Continuous-Wave Output Power

作　　者：刘媛媛[1] 王俊[1] 李伟[1] 罗鸿[1] 李秀芳[1] 周秀宁[1] 刘素平[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《激光与光电子学进展》2010年第9期87-90,共4页Laser & Optoelectronics Progress

摘　　要：理论分析了不同填充因子、不同腔长的阵列器件在同样的连续输出功率下的热分布情况,讨论了金刚石热沉对阵列器件散热的影响以及比较了双面散热与单面散热时阵列器件的热分布效果。在理论分析的基础上,采用宽波导结构,2mm腔长,80%填充因子阵列结构,实现了176W的连续输出。Temperature distribution of diode arrays in different fill factors and cavity lengths operating at the same continuous-wave output power is simulated.And the influence of diamond sink and both sides cooling on the thermal distribution of arrays are discussed.On the base of the theoretic analysis,using large waveguiding structure,2 mm cavity length and high fill factor of 80%,continuous-wave output power of 176 W is achieved.

关 键 词：连续波激光器 高功率 热效应 阵列结构 

分 类 号：TN248.4[电子电信—物理电子学]