溅射条件对SiO_2膜力学特性的影响  

Effect of sputtering conditions on dynamic property of SiO2 thin film

作　　者：孙承松[1] 魏永广[1] 关艳霞[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,辽宁沈阳110023

出　　处：《沈阳工业大学学报》1999年第3期204-206,共3页Journal of Shenyang University of Technology

摘　　要：介绍了在不锈钢衬底和Ｎｉ－Ｃｒ应变电阻间ＳｉＯ２薄膜的制做方法，在不宜用热氧化和ＣＶＤ法制做ＳｉＯ２膜的情况下，利用该法是行之有效的．探讨了溅射工艺条件对膜附着力和应力的影响，并指出了制备具有较好附着力和较低应力的方法．This paper introduce the fabrication of SiO2 thin film between the stainless steel substrateand Ni - Cr strain resistance, annlyses the effect of sputtering conditions on the thin film adhe-and proposes the way to make the thin film with good adhesion and the strain sion and little strainThe method is a very effective on the condition that the ways of heat oxidation and CVD are notappropriate during the fabrication of SiO2 film.

关 键 词：溅射 力学特性 二氧化硅 薄膜 附着力 

分 类 号：TN304.21[电子电信—物理电子学] O484.2[理学—固体物理]