PI掺杂多孔SiO_2薄膜的制备及性能研究进展  

Preparation of PI-Doped Porous SiO_2 Films and Research Progress in Its Properties

作　　者：张学艳[1] 王伟伟[1] 柳清菊[1] 

机构地区：[1]云南大学云南省高校纳米材料与技术重点实验室,昆明650091

出　　处：《材料导报》2010年第19期123-125,131,共4页Materials Reports

基　　金：云南省应用基础研究计划重点项目(2006E0001Z)

摘　　要：近年来对掺杂纳米SiO2的聚酰亚胺薄膜的各种性能进行了充分的研究,而对以少量PI掺杂的多孔SiO2薄膜的研究较少。介绍了PI掺杂多孔SiO2薄膜制备过程中影响薄膜性能及应用的两个关键因素(相分离和热处理固化成膜),理论分析了PI掺杂多孔SiO2薄膜的力学性能和绝热性能,最后讨论了目前存在的一些问题和今后的发展趋势。In recent years,there are a large number of researches on the properties of PI film doped with nano- SiO2 ,but the studies on the properties of porous SiO2 film doped with PI are less. Two key factors, phase separation and heat cured film, which affect properties and application of porous SiO2 film doped with PI in the preparation process are described. The mechanical properties and thermal insulation mechanism oF porous SiO2 film doped with PI are theoretically analyzed. Finally, the present problems and trends in the future are discussed.

关 键 词：多孔SIO2 聚酰亚胺 薄膜 制备 性能 

分 类 号：TQ342.21[化学工程—化纤工业]