一种采用斩波技术的CMOS带隙基准电压源  

A CMOS Bandgap Voltage Reference Source Based on Chopper Technology

作　　者：辛晓宁[1] 张磊[1] 

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微电子学》2010年第5期723-726,共4页Microelectronics

摘　　要：设计了一种较高PSRR和较低温度系数的带隙基准电压源。运用斩波调制技术和动态元件匹配技术,有效减小了运放失调电压引起的温度漂移。基于CSMC 0.5μm CMOS工艺,使用Hspice工具对电路进行仿真。斩波频率为1.5MHz时,基准输出电压约为1.235V。在室温25℃时,该带隙基准电源电压范围为3.3V到5.5V。电源电压为3.3V时,在-40℃~85℃温度范围内,温度系数为5.19×10-6,测得PSRR大于70dB@1kHz。A bandgap voltage reference source with high PSRR and low temperature coefficient was designed.In this circuit,temperature drift caused by offset of the amplifier was reduced by using chopper modulation and dynamic element matching.Based on CSMC＇s 0.5 μm CMOS process,the bandgap voltage reference was simulated with Hspice.Results from simulation showed that,for a chopping frequency of 1.5 MHz,the circuit had an output reference voltage of about 1.235 V.At room temperature（25 ℃）,its supply voltage ranged from 3.3 V to 5.5 V.At 3.3 V supply voltage and in the temperature range from-40 ℃ to 85 ℃,the bandgap voltage reference source had a temperature coefficient of 5.19×10-6 and a PSRR greater than 70 dB at 1 kHz.

关 键 词：斩波调制 带隙基准电压源 失调电压 温度漂移 

分 类 号：TN432[电子电信—微电子学与固体电子学]