Thermal Expansion Behavior of Hexagonal ZnS Single-Crystal Nanowires Embedded in Anodized Aluminum Oxide Template  

作　　者：于彦龙 郑立辉 徐鑫 孙宏宇 

机构地区：[1]Department of Applied Technology, Daqing Petroleum Institute, Qinhuangdao 066004 [2]Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084

出　　处：《Chinese Physics Letters》2010年第10期168-171,共4页中国物理快报（英文版）

摘　　要：The thermal expansion behavior of semiconductor single-crystal nanowire arrays is of importance for their applications in electronic and optoelectronic nanodevices. We prepare hexagonal ZnS single-crystal nanowire arrays growing along the [110] direction via electrodeposition. The thermal expansion properties of the as-prepared ZnS nanowires have been studied by in situ x-ray diffraction method. The thermal expansion coefficient （TEC） of the ZnS nanowires decreases consistently from room temperature to 225℃ where it reaches a minimum value, and then increases rapidly. The average TEC in the studied temperature range is 4.74 × 10-6/℃, which is smaller than that of the conventional bulk counterpart.The thermal expansion behavior of semiconductor single-crystal nanowire arrays is of importance for their applications in electronic and optoelectronic nanodevices. We prepare hexagonal ZnS single-crystal nanowire arrays growing along the [110] direction via electrodeposition. The thermal expansion properties of the as-prepared ZnS nanowires have been studied by in situ x-ray diffraction method. The thermal expansion coefficient （TEC） of the ZnS nanowires decreases consistently from room temperature to 225℃ where it reaches a minimum value, and then increases rapidly. The average TEC in the studied temperature range is 4.74 × 10-6/℃, which is smaller than that of the conventional bulk counterpart.

分 类 号：TB383[一般工业技术—材料科学与工程] TQ174.12[化学工程—陶瓷工业]