Rectifying and Photovoltage Properties of ZnO：Al/p-Si Heterojunction  

作　　者：马晶晶 金克新 罗炳成 范飞 邢辉 周超超 陈长乐 

机构地区：[1]Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnicsl University, Xi'an 710072

出　　处：《Chinese Physics Letters》2010年第10期194-197,共4页中国物理快报（英文版）

基　　金：Supported by the NPU Foundation for Fundamental Research under Grant Nos NPU-FFR-JC200821 and JC201048, the National Natural Science Foundation of China under Grant No 50702046, and the NWPU ＂Aoxiang Star＂ project.

摘　　要：An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors （n 〉〉 2） of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO：Al film shows metal-like conductivity with the electrical resistivity about 6.56 × 10-4 Ω·cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors （n 〉〉 2） of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO：Al film shows metal-like conductivity with the electrical resistivity about 6.56 × 10-4 Ω·cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.

分 类 号：TN313.2[电子电信—物理电子学] O484.4[理学—固体物理]