单晶硅片超精密磨削技术与设备  

Ultra-precision Grinding Technology and Grinder of Silicon Wafers

作　　者：朱祥龙[1] 康仁科[1] 董志刚[1] 郭东明[1] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,大连116024

出　　处：《中国机械工程》2010年第18期2156-2164,共9页China Mechanical Engineering

基　　金：国家高技术研究发展计划(863计划)资助项目(2008AA042505);国家科技重大专项02专项(2009ZX02011);NSFC-广东省联合基金资助项目(U0734008)

摘　　要：结合单晶硅片的发展,回顾了单晶硅片超精密磨削技术与设备的发展历程,对比分析了广泛应用的转台式磨削、硅片旋转磨削和双面磨削等硅片磨削技术的原理及代表性设备的特点,讨论了用于单晶硅片平整化加工和背面减薄加工的低损伤磨削技术的最新进展,并对单晶硅片磨削技术的发展趋势进行了展望。The advances of surface grinding technology and grinder of silicon wafers were introduced based on the development of silicon wafers.The grinding principles and the characteristics of representative grinders widely using for silicon wafer grinding technologies,i.e.,rotary table grinding,wafer rotation grinding,and double-side grinding,were comparatively analyzed.The latest advances of low-damage grinding technologies for silicon wafers back thinning and planarization were discussed and the trend of the wafer grinding technology was prospected.

关 键 词：单晶硅片 超精密磨削 磨削设备 低损伤磨削 平整化 背面减薄 

分 类 号：TN305.1[电子电信—物理电子学]