棒状纳米ZnO薄膜晶体管效应的测定  

Field-effect Determination of the Rod-like Nano-ZnO Thin Film Transistors

作　　者：杨文[1] 林栋[1] 徐磊[1] 寿崇琦[1] 

机构地区：[1]济南大学化学化工学院,山东济南250022

出　　处：《山东化工》2010年第9期1-4,共4页Shandong Chemical Industry

摘　　要：分别采用水热法和微乳法制得了两种直径为10～40nm和60～70nm的棒状纳米ZnO材料;然后将制得的纳米材料乙醇溶液旋涂到石英基片上,将其中一部分旋涂膜进行煅烧,最后将经过煅烧和未经过煅烧的旋涂膜基片采用top-contact的方法镀上电极制成薄膜晶体管进行场效应的测定;实验表明:对于直径不同和同种样品旋涂膜经不同处理的场效应参数存在明显的差异,特别是电子迁移率,直径较大的未经煅烧的纳米ZnO旋涂膜的电子迁移率可以达到μ=156cm2V-1s-1。Two kinds of different diameters rod - like nano - ZnO materials were obtained by hydrothermal method and microemulsion methods respectively, the diameters of which were 10 -40nm and 60-70nm; then the ethanol solution of the nano - materials was spin - coated onto the quartz substrates, and part of spin -coating film was caleinated, and finally the calcined and not be calcined spin -coating film using top- contact method were plated on the electrodes and then were made of rIFT element for the determination of field - effects. Experiments showed that： the different diameters or the spin - coating films of the same samples by different kinds of treatments would resulted in an obvious differences in field - effect parameters, especially the electron mobility. The electron mobility of the larger diameter nano - ZnO of the spin - coating film without calcination could be achieved by μ = 156cm2 V -1 s -1

关 键 词：纳米氧化锌 纳米氧化锌旋涂膜 薄膜晶体管(TFT) 

分 类 号：TN321.5[电子电信—物理电子学]