直流电场作用下的快速粉末渗硅工艺  

Technology for Fast Powder Siliconizing in the Presence of Direct Current Field

作　　者：赵爱玲[1,2] 周正华[1] 谢飞[1] 潘献波[1] 胡静[1] 

机构地区：[1]常州大学材料科学与工程学院,江苏常州213164 [2]海安县科学技术局,江苏南通226600

出　　处：《材料保护》2010年第10期36-38,共3页Materials Protection

基　　金：江苏省高校自然科学基金(06KJB430021);江苏省大学生实践创新训练计划(SCZ090-5133A)资助

摘　　要：为了探讨施加直流电场对固体粉末渗硅渗速的影响,以20钢为基材,通过在渗硅介质与被改性样品间施加直流电场,研究快速粉末渗硅的合适工艺条件,并研究该工艺获得的渗层性能。结果表明:直流电场可降低粉末渗硅温度,显著提高渗硅速度;可使常规粉末渗硅温度从1 050℃以上降低到750℃;加热温度为800℃,直流电流6 A时,20钢的渗硅层厚约85μm;直流电场条件下获得的渗硅层主要由Fe5Si3相组成,在700℃具有良好的抗氧化性能。Cailiao Baohu 2010,43(10),36～38(Ch).The effect of direct current field on powder siliconizing was investigated by applying direct current field between the siliconizing medium and modified sample of 20 steel substrate.The proper processing conditions for powder siliconizing were established.Results show that applying direct current field contributes to decrease of temperature(from 1 050 ℃ to 750 ℃ for conventional powder siliconizing) and increase of siliconizing rate.It was feasible to obtain a siliconizing layer of 85 μm thick on the surface of 20 steel by applying direct current of 6 A at 800 °C.Resultant siliconizing layer was mainly composed of Fe5 Si3 and had good oxidation resistance below 700 °C.

关 键 词：粉末渗硅 直流电场 抗氧化 20钢 渗硅速度 

分 类 号：TG156.83[金属学及工艺—热处理]