The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs  

作　　者：李劲 刘红侠 李斌 曹磊 袁博 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University

出　　处：《Chinese Physics B》2010年第10期485-491,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010)

摘　　要：Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.

关 键 词：silicon-germanium-on-insulator MOSFETs strained Si short channel effects the draininduced barrier-lowering 

分 类 号：TN386.1[电子电信—物理电子学] TN322.8