一维纳米SiC-CNTs复合结构的生长机制和阴极射线发光  

Growth Mechanism and Cathodoluminescence of One-dimensional Composite Nanostructure

作　　者：潘跃武[1] 胡湛[2] 

机构地区：[1]徐州工程学院数学与物理科学学院,江苏徐州221008 [2]吉林大学原子与分子物理研究所,吉林长春130023

出　　处：《发光学报》2010年第5期743-747,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(50572019);徐州工程学院(3600716043)资助项目

摘　　要：采用直接固相反应法制备了一维SiC-CNTs纳米复合结构。初始反应原料为纯的硅粉和碳纳米管混合物,没有使用任何触媒,在1 400℃温度下获得了一维纳米产物。采用X射线衍射、扫描电子显微镜、拉曼光谱、阴极射线发光光谱研究了产物的结构和光学性质。获得的一维S iC-CNTs纳米复合结构外径约为60nm,长度超过几个微米。CL谱中存在三个发射带,中心位置分别为2.89,2.39,2.22 eV。One-dimensional silicon carbide-carbon nanotube composite nanostructure was fabricated using a direct solid reaction process between pure silicon powders and carbon nanotubes at 1 400 ℃ in this paper.A structural and optical analysis,by mean of X-ray diffraction,scanning electron microscopy,Raman scattering and cathodoluminescence spectroscopy were performed.The outer diameter of the as-prepared one-dimensional composite nanostructure was approximately 60 nm.The composite products showed pronounced luminescent properties with three emission bands centered at 2.89,2.39 and 2.22 eV by room temperature cathodoluminescence.

关 键 词：碳化硅 纳米复合结构 阴极射线发光 碳纳米管 

分 类 号：O469[理学—凝聚态物理]