半导体T-stub波导中电子的磁输运  

Electronic magnetic-transport in a T-stub semiconductor waveguide

作　　者：姜宗祎[1] 迟锋[1] 

机构地区：[1]渤海大学物理系,辽宁锦州121013

出　　处：《渤海大学学报（自然科学版）》2010年第3期264-267,共4页Journal of Bohai University:Natural Science Edition

基　　金：国家自然科学基金(No:10704011);辽宁省教育厅(No:2009A031)

摘　　要：用格点格林函数理论研究与两个引线连接的T-stub量子波导中电子输运性质。通过调节施加在波导一端上的栅压,可以在其上面定义一个侧臂。侧臂的存在使得电子在运动过程中发生量子干涉效应,从而对透射概率或电流、电导有明显的作用。外加垂直磁场能够改变不同自旋方向电子的能量和干涉效应,能够进一步调控上述物理量。本文研究的系统可以用作量子调制三极管,在半导体器件设计中有实际的应用价值。Based on the lattice Green＇s function technique, electron transport in a T - stub waveguide connected to external electron reservoirs is theoretically studied. By adjusting the voltage on top of one end of the waveguide, one can define a sidearm on it. The electrons tunneling in the waveguide then will interfere with each other, resulting in significant impact on the transmission or the current and the conductance. External vertical magnetic field will change both the energy and the interference phenomenon of electrons having different spin directions, and thus can be used to control the above -mentioned physical quantities. The system under discussion can be used as a quantum modulated transistor and should have practical usage in device design.

关 键 词：格点格林函数 半导体波导 T—stub 

分 类 号：O469[理学—凝聚态物理]