Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT  

作　　者：蒲颜 王亮 袁婷婷 欧阳思华 庞磊 刘果果 罗卫军 刘新宇 

机构地区：[1]Key Laboratory of Microelectronics Device & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2010年第10期24-27,共4页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)

摘　　要：The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

关 键 词：AlGaN/GaN HEMT multi-bias CV curves non-linear CV model 

分 类 号：TN386[电子电信—物理电子学]