Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures  

作　　者：陈延湖 申华军 刘新宇 徐辉 李玲 李惠军 

机构地区：[1]School of Information Science and Engineering,Shandong University [2]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2010年第10期28-31,共4页半导体学报（英文版）

摘　　要：The thermal and electro stability of multi-finger heterojunction bipolar transistors （HBTs） with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC-I V test and thermal resistance calculation. Their electro stability; was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula.The thermal and electro stability of multi-finger heterojunction bipolar transistors （HBTs） with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC-I V test and thermal resistance calculation. Their electro stability; was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula.

关 键 词：heterojunction bipolar transistor thermal stability electro stability 

分 类 号：TN322.8[电子电信—物理电子学] O613.71[理学—无机化学]