A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices  

作　　者：祝鹏 潘立阳 古海明 谯凤英 邓宁 许军 

机构地区：[1]Institute of Microelectronics,Tsinghua University [2]Tsinghua National Laboratory for Information Science and Technology

出　　处：《Journal of Semiconductors》2010年第10期52-56,共5页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2006CB302700);the National Natural Science Foundation of China(No.60876076);the National Key Scientific and Technological Project of China(No.2009ZX02023-5-3)

摘　　要：A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.

关 键 词：charge pumping trapped charge distribution localized VT 

分 类 号：TN432[电子电信—微电子学与固体电子学]