A low-voltage sense amplifier for high-performance embedded flash memory  

作　　者：柳江 王雪强 王琴 伍冬 张志刚 潘立阳 刘明 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences [2]Institute of Microelectronics,Tsinghua University

出　　处：《Journal of Semiconductors》2010年第10期74-78,共5页半导体学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(No.2008AA031403);the National Basic Research Program of China(No.2010CB934204);the National Science Fund for Distinguished Young Scholars of China (No.60825403)

摘　　要：This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.

关 键 词：sense amplifier current mode embedded flash memory low voltage 

分 类 号：TP333.1[自动化与计算机技术—计算机系统结构]