脉冲准分子激光制备多层铁电薄膜的铁电性能研究  

Investigation into Ferroelectric Characteristics of Multilayer Thin Films Prepared by PLD

作　　者：易图林[1] 何翔[1] 孙奉娄[1] 

机构地区：[1]中南民族学院电子工程系

出　　处：《西南民族学院学报（自然科学版）》1999年第1期45-49,共5页Journal of Southwest Nationalities College(Natural Science Edition)

摘　　要：为ＦＲＡＭ、ＦＦＥＴ、ＦＤＭ的实际应用和研究提出了多层结构铁电薄膜的设计思想．采用脉冲准分子激光淀积方法实际制备了两种不同电极的ＢＩＴ／ＰＬＺＴ／ＢＩＴ／ｐ－Ｓｉ多层铁电薄膜．用Ｓａｗｙｅｒ－Ｔｏｗｅｒ电路测试了这两种薄膜的铁电性能．结果表明，多层结构铁电薄膜具有良好的铁电性能。The design idea of multilayer ferroelectric thin films is presented for FFET,FRAM and FDM’s application and research.The multilayer ferroelectric BIT/PLZT/BIT/P Si with different electrode are successfully prepared by pulsed excimer laser deposition.The ferroelectricity of these multilayer thin films are measured by using Sawyer Tower circuits.The experimental results indicate that the multilayer ferroelectric thin films have good ferroelectic characteristics and the kind with oxide electrode is superior to that with Pt electrode.

关 键 词：BIT/PLZT/BIT 多层铁电薄膜 铁电性能 激光 

分 类 号：TM22[一般工业技术—材料科学与工程] O484.43[电气工程—电工理论与新技术]