共沉淀法制备ZnO压敏陶瓷的烧结缺陷研究  

A Study of Sintering Defects in ZnO Varistor Ceramic Fabrecated By Coprecipitation

作　　者：邢怀民[1] 戴宪起[1] 张瑞英[1] 程国生[1] 张金仓[1] 

机构地区：[1]河南师范大学物理系

出　　处：《河南师范大学学报（自然科学版）》1999年第1期27-29,59,共4页Journal of Henan Normal University(Natural Science Edition)

基　　金：国家自然科学基金

摘　　要：本文研究了共沉淀法制备ＺｎＯ压敏陶瓷材料烧结缺陷的特点及其对压敏特性的影响．结果表明，晶粒表面所形成的微空洞主要由ＺｎＯ的分解挥发产生，晶界的微空洞则主要是由富集于晶界处的Ｂｉ２Ｏ３分解挥发产生．并对这两类烧结缺陷的形成进行了初步讨论．The sintering defects of ZnO varistor ceramic have been studied. With sintering temperature increasing, two types of defects were found in such marterials. One is due to the decomposition and volatilization of ZnO on the grains surface, and the other is due to the such action of Bi 2O 3 in the grain boundaries, both of which lead to polar growth of ZnO grains. Furthermore, its mechanism and effects on eletrical properties have been discussed.

关 键 词：压敏陶瓷 共沉淀法 烧结缺陷 氧化锌 制备 

分 类 号：TQ174.758[化学工程—陶瓷工业] TQ174.756[化学工程—硅酸盐工业]