硼掺杂微晶硅薄膜的椭圆偏振光谱分析  

BORON-DOPED MICROCRYSTALLINE SILICON FILMS USING SPECTROSCOPIC ELLIPSOMETRY ANALYSIS

作　　者：李新利[1] 卢景霄[1] 王志永[1] 谷锦华[1] 李瑞[1,2] 杨仕娥[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052 [2]河南工业大学,郑州450051

出　　处：《硅酸盐学报》2010年第10期1905-1911,共7页Journal of The Chinese Ceramic Society

基　　金：国家重点基础研究发展计划(N2006CB202601)资金项目

摘　　要：采用射频等离子体增强化学气相沉积(radio frequency plasma enhanced chemical vapor deposition,RF-PECVD)技术在玻璃衬底上沉积了硼掺杂微晶硅薄膜。采用椭圆偏振光谱和Raman光谱分析了辉光功率和硼掺杂量对薄膜的晶化率、表面粗糙度、空隙率和非晶孵化层厚度的影响。结果表明:随着输入功率的增加,薄膜表面粗糙度的变化趋势为先缓慢减小、再快速增加、然后再次减小;沉积薄膜中的体层晶化率和空隙率的变化趋势相同,而空隙率与非晶孵化层厚度的变化趋势相反。随着初始硼掺量的增加,薄膜表面粗糙度的变化趋势为先缓慢增加、再减小、然后再增加;沉积薄膜的体层晶化率和空隙率并没有类似的对应关系。此外,对RF-PECVD沉积硼掺杂微晶硅的生长机理进行了分析。A boron doped microcrystalline silicon films were prepared on glass substrate by the radio frequency plasma enhanced chemical vapor deposition（RF-PECVD） technique.The effects of the input power and the amount of doped boron on surface roughness,voidage,and the amorphous incubation layer thickness of the silicon films were investigated by spectroscopic ellipsometry and Raman spectra.The results show that with the increase of input power,the surface roughness of the silicon films exhibits the following behaviors：first slightly decreases,and then increases very soon,finally drops again.The crystallinity of the bulk layer and the voidage in the silicon films have same change tendency,nevertheless the voidage and the amorphous incubation thickness have the opposite change tendency.With the increase of the amount of doped boron,the surface roughness of the silicon films exhibits the reverse behaviors：first slightly increases,and then drops,lastly increases again,and the crystallinity does not show correlative relation with the voidage and the amorphous incubation thickness.In addition,the growth mechanism of the boron doped microcrystalline silicon film prepared by the RF-PECVD also is discussed.

关 键 词：硼掺杂微晶硅薄膜 椭圆偏振技术 表面粗糙度 

分 类 号：O484[理学—固体物理] TN304[理学—物理]