激光修调对CrSi薄膜电阻稳定性的影响  

Effect of Laser Trimming on the Stability of CrSi Thin-film Resistor

作　　者：罗山[1,2] 向培胜 胡剑书 

机构地区：[1]空军工程大学,陕西西安710000 [2]驻重庆气体压缩机厂军事代表室,重庆400060

出　　处：《压电与声光》2010年第5期821-822,829,共3页Piezoelectrics & Acoustooptics

摘　　要：该文分析了激光修调对CrSi薄膜电阻稳定性的影响,获得了对CrSi薄膜电阻进行激光修调的优化方法。实验结果表明,150℃储存48h,可完全消除激光修调带来的影响,使CrSi薄膜电阻温度系数降到了20×10-6/℃,提高了CrSi薄膜电阻网络的稳定性,从而为研制高性能模拟集成电路打下坚实的基础。The effect of the laser trimming on the stability of the CrSi thin-film resistor has been analyzed in this paper.The optimized method of the laser trimming for the CrSi thin-film resistor has been obtained.The experimental results showed that the effect of the laser trimming on the CrSi thin-film resistor could be eliminated completely under the condition of storing the thin-film at 150 ℃ for 48 h.The temperature coefficient of the CrSi thin-film resistor was reduced to 20×10-6/℃,and the stability of the CrSi thin-film resistor network has been improved.The study has laid a solid foundation for developing the high performance analog integrated circuit.

关 键 词：CrSi电阻 激光修调 温度系数 

分 类 号：TN804[电子电信—信息与通信工程]