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作 者:吴远大[1] 安俊明[1] 王玥[1] 尹小杰[1] 张家顺[1] 李建光[1] 王红杰[1] 胡雄伟[1]
机构地区:[1]中国科学院半导体研究所光电研发中心,北京100083
出 处:《光电子.激光》2010年第10期1452-1454,共3页Journal of Optoelectronics·Laser
基 金:国家自然科学基金资助项目(60707008;60977045);国家"863"计划资助项目(2007AA03Z420)
摘 要:采用有机/无机杂化溶胶-凝胶方法制备高质量的SiO2薄膜和光敏性薄膜材料;利用三维FD-BPM(finitedifference beam propagation method)研究了掩埋式和暴露式矩形波导结构多模干涉(MMI)型光功率分束器的主要性能,理论模拟发现,掩埋式矩形波导结构分束器的长度、宽度和厚度容差性都优于暴露式矩形波导结构的MMI型分束器,并且具有更宽的带宽特性。通过简单的紫外曝光、显影工艺制备了1×4 MMI型波导分束器,分束器在1 550 nm波长附近的插入损耗为8.1~8.8 dB,功率分束不均匀性小于1 dB。The perfect photosensitive SiO2 films with no cracks,small roughness and smooth surface are fabricated by the organic/inorganic hybrid sol-gel method.Then,the main performance of multi-mode interference(MMI) power splitters with the two kinds of UVlight imprinting structures,buried rectangular waveguide and exposed rectangular waveguide,is discussed using three-dimensional finite difference beam propagation method(FD-BPM).The simulated results show that the MMI optical power splitter with the buried structure has superior length,width,depth tolerances and wider bandwidth compared with that with the exposed structure,which is fit for dense wavelength division multiplex(DWDM) system.Finally,1×4 MMI power splitters with buried rectangular waveguide structure are fabricated by the UV-light imprinting and organic/inorganic hybrid sol-gel technology.The insertion loss is about 8.1-8.8 dB,and the splitting uniformity is lower than 1 dB at the wavelength of 1 550 nm.
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