多孔硅微结构与场发射性能研究  

Study of Porous Silicon Microstructure and Field Emission Characteristics

作　　者：蔡南科[1] 蒋洪奎[2] 朱自强[3] 虞献文[1] 

机构地区：[1]浙江师范大学信息科学与工程学院,浙江金华321004 [2]浙江师范大学交通学院,浙江金华321004 [3]华东师范大学信息学院,上海200062

出　　处：《压电与声光》2010年第5期856-858,862,共4页Piezoelectrics & Acoustooptics

基　　金：浙江省科技厅基金资助项目(2008C31013);浙江省金华市科技计划基金资助项目(2006-1-017)

摘　　要：采用阳极氧化及阴极还原表面处理技术制备性能稳定的纳米多孔硅薄膜。用原子力显微镜(AFM)表征多孔硅的表面形貌,用扫描电子显微镜(SEM)表征多孔硅的横截面结构。采用场发射测试装置研究了阳极氧化腐蚀时间及等离子表面处理对多孔硅场发射性能影响。结果表明,阳极氧化腐蚀时间越长,所得多孔硅场发射性能越好,相对应的开启电压越低,电流密度越大;等离子处理可有效提高场发射性能,等离子处理后的多孔硅薄膜作为阴极发射材料具有极大的潜能。Porous silicon films were fabricated by the anode oxidation and cathode deoxidize surface dispose technologies.The surface morphology of the porous silicon films were characterized by atomic force microscopy（AFM）,and the cross-section of the porous silicon films were characterized by scanning electron microscopy（SEM）.The effects of the time for the anodic oxidation etching and the plasma surface treatment on the field emission properties of porous silicom films have been studied by the field emission device.The results showed that the longer time of anode oxidation,the better field emission performance of the porous silicon film,corresponding to the lower turn-on voltage and the greater current density.Plasma treatment can effctively improve the field emission properties.The plasma-treated porous silicon films as field emission cathode have a great potential application.

关 键 词：多孔硅 阳极氧化法 场电子发射 

分 类 号：TN304[电子电信—物理电子学]