半导体釉-电瓷组合形式绝缘子串污闪特性试验分析  

Experimental Analysis on Combination of Semi-conducting Glaze and Porcelain Insulator String

作　　者：关志成[1] 刘敏[1] 王黎明[1] 张福增[2] 赵锋[3] 

机构地区：[1]清华大学深圳研究生院 [2]中国南方电网公司电网技术研究中心 [3]合肥供电公司

出　　处：《高电压技术》2010年第9期2101-2106,共6页High Voltage Engineering

基　　金：国家自然科学基金(50777033) ;国家重点基础研究发展计划(973计划)(2009CB724503)~~

摘　　要：针对半导体釉绝缘子存在的老化耗能问题,提出了半导体釉与普通电瓷绝缘子的组合方案(S-P组合绝缘子串)。利用有限元方法对S-P组合绝缘子串进行了电位分析,进行了实际污秽闪络特性的试验,分析了这种组合形式绝缘子串的闪络过程,并与其它类型绝缘子进行了对比。试验结果表明:半导体釉绝缘子位于高压端的绝缘子串污闪特性优于其低压端污闪特性;单位绝缘长度和单位爬距的污闪电压,S-P组合绝缘子串低于半导体釉绝缘子,高于进行对比的电瓷绝缘子和一大一小复合绝缘子;维持半导体釉绝缘子表面污秽不变的情况下,普通绝缘子表面的污秽度提高,泄漏电流增大,S-P组合绝缘子串表面电位分布更均匀,产生的热量增加,抑制了沿面放电的产生,提高了污闪电压。To research the semi-conducting glaze and porcelain insulator string（S-P insulator string） in connection with the defect of the semi-conducting insulators,such as aging and energy loss,the finite element method was used to analyze the potential of S-P insulator string,and the pollution flashover were experimentally compared with other types of insulators.Experimental results show that the pollution flashover voltage when semi-conducting glaze insulator lies in the high-voltage side is significantly higher than that in the low-voltage side;For the flashover voltage of unit insulated length and unit creepage distance,S-P combined insulator string is lower than semi-conducting insulator string,but higher than porcelain and composite insulator.For the pollution on the semi-conducting insulator surface,ESDD and NSDD on porcelain insulator raise,the leakage current raises,potential distribution is more uniform,the heat raises,and surface discharge is curbed,therfore,the flashover voltage is increased.

关 键 词：电位分布 半导体釉 组合绝缘子串 盐密 污闪特性 泄漏电流 

分 类 号：TM216[一般工业技术—材料科学与工程]