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作 者:许逾群[1] 仉君[1] 袁秉凯[1] 邓珂[1] 杨蓉[1] 裘晓辉[1]
机构地区:[1]国家纳米科学中心,北京100190
出 处:《物理化学学报》2010年第10期2686-2690,共5页Acta Physico-Chimica Sinica
基 金:supported by the National Key Basic Research Program of China(973)(2006CB921502);Knowledge Innovation Program of the Chinese Academy of Sciences(KJCX2-YW-M04)~~
摘 要:采用扫描隧道显微镜(STM)于78 K研究了单个叔丁胺分子在Cu(111)表面的横向跃迁现象.研究发现叔丁胺分子的跳跃几率随隧道电流的增加而线性增加,这表明该过程是单电子激发过程;在不同极性的隧道结电场作用下,叔丁基胺分子跳跃行为发生的几率不同,这种现象可以用电场辅助的扩散过程解释.在不同极性电场作用下叔丁胺分子在Cu(111)表面的吸附能和扩散势垒不同,从而表现出不同的跳跃几率.The lateral hopping of tert-butylamine(t-BA) molecules on a Cu(111) surface was studied by scanning tunneling microscopy(STM) at 78 K.The hopping probabilities of the molecules in the tunneling junction were found to depend linearly on the applied tunneling current,indicating a single electron-induced process.Hopping probabilities under an electric field of opposite polarity was found to be different.This non-equivalence is attributed to an electric field assisted diffusion where the adsorption energy and the diffusion barrier of the t-BA molecule are different when the polar molecule is subjected to opposite electric fields.
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