Effect of Low-frequency Power on F, CF_2 Relative Density and F/CF_2 Ratio in Fluorocarbon Dual-Frequency Plasmas  

作　　者：黄宏伟 叶超 徐轶君 袁圆 施国峰 宁兆元 

机构地区：[1]School of Physics Science and Technology, Jiangsu Key Laboratory of Thin Films,Soochow University

出　　处：《Plasma Science and Technology》2010年第5期566-570,共5页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China (Nos.10975105, 10575074, 10635010)

摘　　要：Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.

关 键 词：fluorocarbon plasma dual-frequency discharge low-k films etching 

分 类 号：O53[理学—等离子体物理] TL631.24[理学—物理]