Numerical Study on the Two-Dimensional Temperature Fields of Titanium/Aluminum Double-Layer Target Irradiated by High-Intensity Pulsed Ion Beam  

作　　者：吴迪 雷明凯 朱小鹏 宫野 

机构地区：[1]College of Physical Science and Technology, Dalian University [2]Surface Engineering Laboratory, Dalian University of Technology [3]Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology

出　　处：《Plasma Science and Technology》2010年第5期581-584,共4页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China (No.10975026)

摘　　要：Interaction between high-intensity pulsed ion beam （HIPIB） and a double-layer target with titanium film on top of aluminum substrate was simulated. The two-dimensional nonlinear thermal conduction equations, with the deposited energy in the target taken as source term, were derived and solved by finite differential method. As a result, the two-dimensional spatial and temporal evolution profiles of temperature were obtained for a titanium/aluminum double-layer target irradiated by a pulse of HIPIB. The effects of ion beam current density on the phase state of the target materials near the film and substrate interface were analyzed. Both titanium and aluminum were melted near the interface after a shot when the ion beam current density fell in the range of 100 A/cm2 to 200 A/cm2.Interaction between high-intensity pulsed ion beam （HIPIB） and a double-layer target with titanium film on top of aluminum substrate was simulated. The two-dimensional nonlinear thermal conduction equations, with the deposited energy in the target taken as source term, were derived and solved by finite differential method. As a result, the two-dimensional spatial and temporal evolution profiles of temperature were obtained for a titanium/aluminum double-layer target irradiated by a pulse of HIPIB. The effects of ion beam current density on the phase state of the target materials near the film and substrate interface were analyzed. Both titanium and aluminum were melted near the interface after a shot when the ion beam current density fell in the range of 100 A/cm2 to 200 A/cm2.

关 键 词：high-intensity pulsed ion beam double-layer target temperature fields numerical method 

分 类 号：O484.1[理学—固体物理]