高活性TiO_2薄膜电极的制备及其光电化学性能  

Preparation and photoelectrochemical properties of TiO_2 film electrode with high activity

作　　者：钱清华[1,2] 冯新[1] 陆小华[1] 

机构地区：[1]南京工业大学化学化工学院,南京210009 [2]连云港职业技术学院医药与化学工程学院,连云港222006

出　　处：《中国有色金属学报》2010年第8期1583-1590,共8页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学海外青年学者合作研究基金资助项目(20428606);国家自然科学基金重点资助项目(20236010);国家自然科学基金资助项目(20676062;20676029);国家重点基础研究发展计划资助项目(2003CB615700);国家高技术研究发展计划资助项目(2006AA03Z455);江苏省高校科研成果产业化推进资助项目(JHZD08-49)

摘　　要：以Ti(n-OC4H9)4和CH3COOK为原料,采用溶胶-凝胶法在导电玻璃基底上制备K2Ti2O5薄膜,进一步以K2Ti2O5薄膜为前躯体,用离子交换法获得TiO2纳米薄膜电极。利用X射线衍射(XRD)和扫描电子显微镜(SEM)分析薄膜的组成和表面特征;以草酸为有机污染物代表,通过光电化学技术考察薄膜的光电化学活性。结果表明:TiO2纳米薄膜具有锐钛矿晶型,其粒径随着K2Ti2O5薄膜制备温度的降低而减小,约为30～150nm;TiO2纳米薄膜在0.1mol/LNa2SO4溶液中具有典型的光电化学活性以及较高的稳定性,比在含少量草酸的溶液中采用溶胶-凝胶法制备的TiO2薄膜具有更强的光激发和更稳定的光电流响应性能,TiO2薄膜电极的平带电位发生负移,负移值为0.140V(vsSCE),饱和光电流密度为0.32mA/cm2。The TiO2 nanofilm electrodes were obtained by ion-exchange method using K2Ti2O5 films as precursors which were prepared on tin-doped indium oxide（ITO） glass substrates by sol-gel process using Ti（n-OC4H9）4 and CH3COOK as raw materials.The structural composition and surface characteristics were characterized by X-ray diffractometry（XRD）,scanning electron microscopy（SEM）.The photoelectrochemical properties of the TiO2 films were assessed by electrochemical techniques using oxalic acid as organic pollutant.The results show that the crystalline state of the TiO2 nanofilm is anatase,its particle size is about 30-150 nm and decreases with the decrease of preparation temperature of K2Ti2O5 film.The TiO2 film electrode has typical photoelectrochemical activities and high stability in 0.1mol/L Na2SO4 solution.The photoelectrochemical activities of the TiO2 film electrode increase and its flat-band potentials shift negatively in electrolyte solution with small amount of H2C2O4 compared with those in the solution without H2C2O4.The film electrode has stronger photo-response and more stable photocurrent high stability than those of TiO2 film prepared by sol-gel method.The shift value of the flat-band potential of the TiO2 film electrode is 0.140 V（vs SCE）and the saturated photocurrent density is 0.32 mA/cm2.

关 键 词：TiO2薄膜电极 光电化学性能 平带电位 离子交换 

分 类 号：O64[理学—物理化学]