退火处理对CsBr:Eu^(2+)光激励发光性能的影响  

Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu^(2+)

作　　者：孟佳[1,2] 赵丽丽[1] 吴洁华[1] 宋力昕[1] 

机构地区：[1]中国科学院上海硅酸盐研究所特种无机涂层重点实验室,上海200050 [2]中国科学院研究生院,北京100049

出　　处：《无机材料学报》2010年第9期952-956,共5页Journal of Inorganic Materials

摘　　要：采用高温固相烧结法制备了CsBr:Eu2+粉体,系统研究了退火处理后粉体的光激励发光谱、吸收差谱和光激励发光衰减时间等,发现退火处理能有效提高CsBr:Eu2+粉体光激励发光强度,缩短其发光衰减时间.重点分析了退火气氛与光激励发光性能之间的关系,实验结果表明,退火气氛中的氧取代溴离子Br-成为替位氧离子Os-,而氢原子将进入间隙位成为间隙氢原子Hio.替位氧离子Os-以及Hio和Ho2i都是有效的电子俘获中心,并且它们与空穴俘获中心的形成密切相关.CsBr：Eu2＋ powders were prepared by solid-state reaction.The photostimulated luminescence（PSL）spectra,the differential absorption spectra（DAS）and PSL lifetime spectra were systematically investigated.The results reveal the annealing process can increase the PSL intensity and decrease the PSL lifetime.The relationship between the annealing atmosphere and PSL properties were discussed in detail,and the results reveal that substitutional oxygen ions Os-（S：substitute,O-substitute for Br-）and interstitial hydrogen atoms H io are formed in the annealing process.All of Os-,H io and H o2i are electron trap centers,which are closely related to the formation of hole traps centers.

关 键 词：CsBr:Eu2+ 光激励发光 退火 电子/空穴俘获中心 

分 类 号：TN304[电子电信—物理电子学]