高光束质量大功率半导体激光阵列的热特性  

Thermal Characteristic of High Beam Quality Laser Diode Array

作　　者：王智群[1] 尧舜[2] 崔碧峰[1] 王智勇[2] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100124 [2]北京工业大学激光工程研究院,北京100124

出　　处：《中国激光》2010年第10期2497-2501,共5页Chinese Journal of Lasers

基　　金：国家863计划(2006AA03A121)资助课题

摘　　要：针对目前大功率半导体激光短阵列器件和多个半导体激光单元器件集成结构应用于全光纤结构光纤激光器的发展趋势及其相关热控制理论的缺乏,利用有限元软件ANSYS对基于标准传导热沉散热结构的高光束质量半导体激光阵列(LDA)进行热特性仿真计算,通过改变阵列内部发光单元间距、发光单元数,将传统高填充因子厘米阵列(cm-bar)结构过渡到短阵列器件或多单元集成器件热模型,其热特性,为这种具有高光束质量的新型器件的设计及其高性能、长寿命散热提供了理论基础。Aiming at the development trend of high-power semiconductor devices and multiple short laser diode array components integrated structure applied to a single all-fiber structure optical fiber lasers and lack of related heat control theory,the finite element software ANSYS is used to simulate the thermal properties of a high beam quality laser diode arrays based on the standard heat conduction heat sink structure.By changing the spacing and the number of light-emitting unit of the light-emitting elements in the array,the traditional structure of high fill factor cm-bar array is transitioned to short-or multi-unit integrated device thermal model.A theoretical basis is provided for the design and high-performance,long life heat of this new high beam quality device by its hot characteristics.

关 键 词：激光器 半导体激光阵列 热阻 高光束质量 

分 类 号：TN248.4[电子电信—物理电子学]