波段外10.6μm激光辐照中红外PV型HgCdTe光电探测器机理分析  

PV-type HgCdTe detector irradiated by out-of-band CW10.6μm laser

作　　者：李莉[1] 陆启生[1] 

机构地区：[1]国防科学技术大学光电科学与工程学院,长沙410073

出　　处：《强激光与粒子束》2010年第11期2535-2539,共5页High Power Laser and Particle Beams

基　　金：国防预研项目(2004413260101)

摘　　要：用波长为10.6μm的波段外连续波激光辐照PV型HgCdTe中红外光电探测器,得到了不同辐照功率密度下探测器的响应输出随激光功率密度变化的一系列实验结果。观察到探测器对波段外激光的电压响应方向与波段内激光的电压响应方向相同,随波段外激光功率密度升高,探测器的电压响应值先增大后减小。分析认为:该现象是由于探测器材料的弱吸收和基底材料的强吸收在不同时刻产生的不同的温度梯度,与材料的整体温升共同作用的结果。该温度梯度在探测器内产生温差电动势,而热激发的电子空穴对在温度梯度的作用下定向运动被结电场分离,产生热生电动势,热生电动势是波段外激光辐照下PV型探测器中电动势产生的主要机制。PV-type HgCdTe infrared detector is irradiated by 10.6 μm CW laser which is out of the detector＇s response waveband.A series of detector output under various laser intensities are obtained.Responses of the detector to the irradiation of 10.6 μm laser are positive to that of in-band laser.The voltage output of the detector first increases and then decreases as the laser power density is increasing.Analysis shows that temperature rise and temperature grads are the main causes.Thermovoltage is generated when heat excited free electrons and vacancies diffuse under temperature grads,then separated by the electric field of PN junction.Thermovoltage is the main part of output when PV-type detector is irradiated by out-of-band laser.

关 键 词：激光辐照效应 PV型HgCdTe光电探测器 波段外激光 热生电动势 

分 类 号：TN249[电子电信—物理电子学]