一种新型过温保护电路  

Novel Over-Thermal Protection Circuit

作　　者：王永顺[1] 贾泳杰[1] 

机构地区：[1]兰州交通大学电子与信息工程学院,兰州730070

出　　处：《半导体技术》2010年第10期1020-1023,共4页Semiconductor Technology

基　　金：兰州市科技发展计划项目(2009-1-1)

摘　　要：采用CSMC0.5μm工艺,设计了一种新型过温保护电路。从检测温度和控制温度两方面考虑,通过优化电路结构,提出一种新型系统解决方案。在不引入热振荡的前提下,实现稳定电路温度和输出关断信号的双重功能。采用Cadence的Spectre仿真器进行仿真,结果表明,温度在-50～200℃时,PTAT电压以10.5 mV/℃变化,过温保护开启温度为105℃,具有滞迟功能。成功流片后对芯片进行测试,结果显示,在20～130℃内,PTAT电压灵敏度约为10 mV/℃,过温保护开启温度的实测值与仿真值的偏差小于3℃,滞迟范围为20℃。该保护电路是开关电源IP的重要组成部分,在设计过程中时刻考虑其工艺健壮性和可重用性的约束条件,确保其可移植性。A novel over-thermal protection circuit was designed,simulated and fabricated by CSMC 0.5 μm technology.The circuit for controlling and detecting temperature was optimized in a new systematical way to implement the dual functions of keeping stable temperature and outputting shunt-down signal.The Spectre simulation results show that the sensitivity of PTAT voltage is 10.5 mV/℃ at-50-200 ℃.The point of over-thermal protection is 105 ℃ with thermal hysteresis.The experimental results indicate that the sensitivity of PTAT voltage is 10 mV/℃ at 20-130 ℃ and the gap of the shutdown temperature between simulations and experiments is less than 3 ℃.The over-thermal protection performances of this chip are promising for the application of switching power supply IP.To make sure the portability,the robustness of technology and reusability play a central role in the design process.

关 键 词：功率密度 过温保护 热滞回 与绝对温度成正比 健壮性 

分 类 号：TN432[电子电信—微电子学与固体电子学]