宽带限幅放大器的研制  

Design of Broadband Limiting Amplifiers

作　　者：刘成鹏[1] 刘英坤[1] 贾长友[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2010年第10期1028-1030,1038,共4页Semiconductor Technology

摘　　要：从双极型晶体管Gummel-Poon模型出发,综合考虑晶体管的器件结构、工作状态和参数提取条件等完成参数提取,运用优化算法对提取参数进行局部和全局优化,给出了得到的GP模型参数值。以此为基础采用差分放大电路形式,完成限幅放大器电路结构设计并对其进行分析,运用ADS仿真软件对限幅放大器进行仿真优化并进行了流片。结果表明,设计完成的限幅放大器在10～300 MHz工作频率内的小信号电压增益最大值大于25 dB,带内平坦度小于±1 dB,限幅输出电压约为1.2 V。Based on Gummel-Poon model of bipolar transistors,the model parameters extraction were accomplished through considering the device structures,working states and extracting parameters condition.By optimizing the model parameters partly and whole with optimize arithmetic,the values of GP model parameters were obtained.Based on these,the differential amplifier circuit was adopted,the circuit of limiting amplifier was designed and analyzed.The limiting amplifier was optimized by ADS.The results show that the maximum small signal voltage gain of the limiting amplifier is more than 25 dB,the gain flatness is less than ±1dB,and the limitng output voltage is about 1.2 V.

关 键 词：限幅放大器 GP模型 差分放大器 限幅特性 

分 类 号：TN722.75[电子电信—电路与系统]