硅对NaCl胁迫下野大豆种子萌发的影响  

Effects of Exogenous Silicon on Germination of Glycine soja under Salt Stress

作　　者：王丽燕[1] 

机构地区：[1]德州学院生物系,山东德州253023

出　　处：《大豆科学》2010年第5期906-908,共3页Soybean Science

基　　金：山东省自然科学基金资助项目(Y2006A01);德州市科技计划资助项目(20090162-1)

摘　　要：以野生大豆为材料,研究了外源硅(K2SiO3)对NaCl胁迫下野大豆种子的发芽率、发芽势、发芽指数及胚生长的影响。结果表明:100 mmol.L-1NaCl胁迫浓度可以抑制野大豆种子的萌发,施加0.5和1.0 mmol.L-1K2SiO3后,可以有效提高野大豆种子的萌发速度和萌发率,增加胚根和胚芽的长度。然而当K2SiO3浓度高于2.0mmol.L-1时野大豆种子的萌发则受到抑制。外源施加适宜浓度的硅,可以增强野大豆种子在盐分胁迫下的萌发能力。Effects of silicon on seed germination percentage, viability, germination index and growth of radicle and hypocotyl of Glycine soja seedlings under 100 mmol· L-1 NaCI treatment were studied. The results showed that germination percentage, viability, germination index and growth of radicle and hypocotyl were obviously decreased after NaC1 treatment and the decrease extent could be restored by addition of 0.5 and 1.0 mmol · L- 1 Silicon exogenously. However, high concentrations of K2 SiO3 （ ≥ 2.0 mm · L-1 ） can not restore the inhibition effects of NaC1 on germination percentage, viability, germination index, radicle and hypocotyls growth of the soybean seedlings. The results indicated that the ability of seed germination under salt stress could enhance by addition of silicon with appropriate concentrations exogenously.

关 键 词：野生大豆 盐胁迫 硅 萌发 

分 类 号：S565.1[农业科学—作物学]