碲铟汞(111)晶面腐蚀坑的研究  

Study of etch pits on(111)surface of Hg_3In_2Te_6 crystal

作　　者：罗林[1] 介万奇[1] 孙叶[1] 王涛[1] 傅莉[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2010年第10期1853-1856,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2007AA03Z442);国家自然科学基金资助项目(50872111);(111)引智基金资助项目(B08040)

摘　　要：通过扫描电镜、扫描探针显微镜和电子背散射衍射仪对改进的Chen法腐蚀液在Hg3In2Te6(111)晶片上形成的腐蚀坑进行了研究。实验发现,腐蚀坑形貌主要有线形、梭形、枣形3种,且后两者的沟槽在(111)面的投影只有3种取向,并互成120°夹角。进一步分析的结果表明,上述蚀坑的形成可由螺位错双交滑移的模型加以解释。Etch pits on the（111）face of Hg3In2Te6sample etched by modified Chen solution are investigated by means of scanning electron microscopy,scanning probe microscopy and electron backscatter diffraction instrument.The experimental results show that there are three basic etch pits：line shape,shuttle shape and date shape.In addition,black lines which are（111）plane projections of grooves in the latter two etch pits are oriented in three directions which are at 120°angles to one another.Further analyses show that the formation process of the three etch pits can be explained by the model of double cross-slip of screw dislocation.

关 键 词：碲铟汞 腐蚀坑 位错 电子背散射衍射 双交滑移 

分 类 号：TN304.2[电子电信—物理电子学] O77[理学—晶体学]