石墨烯基电子学研究进展  

Research Progress of Graphene Based Electronics

作　　者：袁明文[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2010年第10期589-594,共6页Micronanoelectronic Technology

摘　　要：综述了石墨烯晶体的能带结构和独特的电子性质,如双极性电场效应、单双层石墨烯效应、衬底效应、石墨烯纳米带(GNR)带隙等特殊效应的研究现状。介绍了石墨剥落技术、外延生长和化学气相淀积(CVD)等石墨烯材料的制备以及表征方法。列举了石墨烯在电子、显示、太阳电池、传感器和氢存储等方面的应用,如在石墨烯场效应管、石墨烯纳米带场效应管(SET)、石墨烯单电子晶体管、石墨烯金属晶体管、石墨烯基纳米电子机械系统(NEMS)、石墨烯分子开关以及石墨烯基高电子迁移率晶体管(HEMT)制备方面的应用。人们已经研究出不同栅长的n/p型顶栅石墨烯场效应管(GFET),并采用标准的S参数直接表征器件的高频性能。理论和实验表明,所有石墨烯纳米带场效应管(GNRFET)在室温下工作的前提是GNR的带宽尺寸小于10nm,并具有半导体场效应管的性能。The band structure and unique electronic properties of the graphene crystal are sum-marized,such as the bipolar electric field effect,single/double layer graphene effect,substrate effect and the special effect of the graphene nanoribbon（GNR）bandgap.The preparation and characterization of the graphene material,including the graphite flaking technology,epitaxial growth and chemical vapor deposition（CVD）are introduced.The graphene applications in electronics,display,solar cells,sensor,hydrogen storage and other aspects are listed,such as graphene-based FETs,geaphene-based nanoribbons FETs,graphene-based single electronic transistors（SETs）,graphene metal transistor,graphene-based nanoelectromechanical systems（NEMS）,graphene-based molecular switches and graphene-based high electron mobility transistors（HEMTs）.The n-and p-type top-gated graphene field effect transistors （GFETs） with various gate lengths have been fabricated,and their high-frequency performances are directly characterized by the standard S-parameters.Theory and experiment results show that all the graphene nanoribbons FETs（GNRFETs）work at room temperature on the premise that the GNR band width is smaller than 10 nm and it has the properties of semiconductor FETs.

关 键 词：石墨烯 石墨烯纳米带(GNR) 场效应管(FET) 单电子晶体管(SET) 纳米电子机械系统(NEMS) 

分 类 号：TN304.18[电子电信—物理电子学] O469[理学—凝聚态物理]