多热源合成SiC温度场的变化规律研究  

Variation Law of Temperature Field in Multi-heat-source Synthesis SiC

作　　者：陈杰[1] 王晓刚[1] 

机构地区：[1]西安科技大学材料科学与工程学院,西安710054

出　　处：《硅酸盐通报》2010年第5期1036-1040,共5页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金资助项目(50174046);陕西省教育厅专项资助项目(08JK347)

摘　　要：通过对多热源合成碳化硅温度场的数值模拟,研究了碳化硅冶炼过程中的温度变化规律,揭示了多热源合成SiC节能增产的机理。研究表明,由于多热源之间的屏蔽作用与热能叠加作用,使高温区域热能扩散和物质扩散动力更强,高温区分布更宽,炉内温场相对更均匀,导致多热源合成SiC技术具有明显的节能、降耗、提质、增产的特点,生产更安全。Through numerical simulation of temperature field in multi-heat-source synthesis SiC furnace,the variation law of temperature field was studied and the mechanism of energy saving and output increasing was revealed.The research shows that the splicing of the thermal field and shielding of each furnace core are the main reasons that the multi-heat-source SiC synthesis furnace has more saving energy,higher quality,higher yield and more safety.In the multi-heat-source synthesis SiC furnace,diffusion of energy and quality become more intense,the high temperature region distribute wider and the temperature field becomes more uniformity.

关 键 词：多热源合成SiC 温度场 数值模拟 

分 类 号：TB383[一般工业技术—材料科学与工程]