石墨基体上电沉积铜成核机理的研究  

Nucleation Mechanism of Copper Electrodeposition on Graphite Substrate

作　　者：赵夕[1] 徐强[1] 丁飞[2] 刘兴江[2] 

机构地区：[1]天津大学化工学院,天津300072 [2]中国电子科技集团公司第18研究所,天津300381

出　　处：《电镀与精饰》2010年第10期1-4,共4页Plating & Finishing

基　　金：国家973计划项目(No.613110602004)

摘　　要：通过循环伏安法和恒电位阶跃暂态法,研究硫酸铜-硫酸溶液中铜在石墨基体上的电沉积行为,并利用扫描电子显微镜观察石墨基体表面金属铜沉积颗粒的形态和分布。结果表明:在较正的电位区间内,铜的沉积遵从连续成核机理;而在较负的电位区间内,铜的沉积遵从瞬时成核机理。Electrodeposition behavior of copper on graphite substrate from CuSO4-H2SO4 solution was studied by cyclic voltammetry and potential step transient methods.The morphology and distribution of the deposited copper metal particles on the graphite substrate surface was observed by scanning electron microscopy.The results indicate that the deposition of copper follows continuous nucleation mechanism at a more positive potential range,whereas the deposition of copper follows instantaneous nucleation mechanism under more negative potential range.

关 键 词：石墨基体 铜 电沉积 成核机理 

分 类 号：TQ153.14[化学工程—电化学工业]