强光注入锁定半导体激光器的理论分析  

Theory Analysis of Strong Optical Injection-locked Semiconductor Lasers

作　　者：李威[1,2] 方晓惠[2,3] 徐铁峰[1] 鲍吉龙[2] 

机构地区：[1]宁波大学信息科学与工程学院,浙江宁波315211 [2]宁波工程学院电子信息学院,浙江宁波315016 [3]赣南师范学院物理与电子信息学院,江西赣州341000

出　　处：《半导体光电》2010年第5期709-712,715,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(60767002);江西省自然科学基金资助项目(0612004);宁波市自然基金资助项目(2010A610178);宁波工程学院校基金资助项目

摘　　要：通过速率方程建立了强光注入半导体激光器的理论模型,研究了注入光强与从激光器注入锁定频率范围的关系。结果表明,强光注入增大了半导体激光器的注入锁定范围。同时对半导体激光器进行了时间特性的数值模拟,计算结果表明,无论是强光注入还是弱光注入,激光器的输出最终都趋于稳定,通过强光注入锁定条件与弱光注入条件下的对比,得出强光注入能有效地抑制弛豫振荡,缩短达到稳定的时间。A theory model of strong optical injection-locked semiconductor lasers was set up by rate equations.The dependence of injection level on the locking range was investigated.The results indicate the strong injection is able to enlarge the locking range of semiconductor lasers.Meanwhile,time-domain analysis is made by the direct numerical simulation to study the transient response characteristic of semiconductor lasers.The analysis results prove that the trend of lasers output would go towards stability finally either with strong injection or weak injection.It is concluded from comparisions that strong optical injection can suppress relaxation oscillations and shorten the time to achieve stability.

关 键 词：注入锁定 半导体激光器 速率方程 锁定范围 数值模拟 

分 类 号：TN248.4[电子电信—物理电子学]