高T_c氧化物La_2CuO_(4+δ)低频弛豫内耗峰的激活能研究  

THE STUDY OF THE ACTIVATION ENERGY ASSOCIATED WITH LOW FREQUENCY RELAXATION INTERNAL FRICTION PEAKS OF THE HIGH T c OXIDE La 2CuO 4+ δ

作　　者：王世兴[1,2] 刘卫[1,2] 张立德[1,2] 

机构地区：[1]中国科学院固体物理研究所 [2]中国科技大学内耗与固体缺陷开放研究实验室

出　　处：《低温物理学报》1999年第2期88-92,共5页Low Temperature Physical Letters

摘　　要：采用全自动多功能内耗测试仪（ＭＦＩＦＡ），对高Ｔｃ氧化物Ｌａ２ＣｕＯ４＋δ的低频内耗作了细致的研究．发现Ｌａ２ＣｕＯ４＋δ在１６０Ｋ～４３０Ｋ温区有三个弛豫峰ｐ１、ｐ２、ｐ３，并由变频实验求出它们的驰豫激活能．在激活能分析基础上，我们认为：ｐ１、ｐ２峰源于氧空位的驰豫跃迁。Abstract \ \ The low frequency internal friction of the high T c oxide La 2CuO 4+ δ is measured in automatic torsion appratus and three relaxation peaks appeared in the temperature range between 160K and 430K. By changing frequency, we got their relaxation activation energies. According to analysis of the activation energies, we believed that the p 1 and p 2 peak derived from the relaxation transition of oxygen vacancy and p 3 from that of oxygen intersitial atoms.

关 键 词：低频内耗 弛豫峰 高TC 氧化物 超导体 激活能 

分 类 号：TM262.01[一般工业技术—材料科学与工程] O511.1[电气工程—电工理论与新技术]